Abstract: By analyzing the features of heat dissipation and isolation technology, that are usually adopted in fabrication of high-voltage gate drivers, a novel gate driver IC with 700 V BCD technology was developed. The current and turn-on time of LDMOS were reduced and the processes of BCD technology were adjusted. As a result, the issues such as high power dissipation and ground floating, that restricted the development and application of such integrated circuits, could be solved. Simulation and test results show that our solution greatly improves the performance of the gate driver and its power dissipation is only about 0.4 W when operating under 400 V at 1 MHz.