烷基硫自由基的结构和电子亲合能

Structures and Electron Affinities of Some Alkylthio Radicals and Their Anions

  • 摘要: 选用7种不同的密度泛函理论方法,在全电子双ζ加极化加弥散函数基组(DZP++)下,对烷基硫自由基及其负离子进行系统研究,获得它们的基态结构和电子亲合能. 结果表明,B3LYP方法预测的绝热电子亲合能与实验值吻合,平均绝对误差是0.047eV;预测的电子亲合能分别为1.838eV (CH3S),1.925eV (C2H5S),1.939eV(n-C3H7S),1.961e

     

    Abstract: Seven different density functional theory methods have been employed to predict the molecular structures and adiabatic electronic affinities of RS/RS-(R=CH3, C2H5, n-C3H7, n-C4H9, n-C5H11, i-C3H7, t-C4H9) radicals and their anions. The basis used is of double-ζ plus polarization quality with additional s-and p-type diffuse functions, labeled as DZP+ +. The most reliable adiabatic electron affinities, obtained by B3LYP methods,are 1.838eV (CH3S), 1.925eV(C2H5S), 1.939eV(n-C3H7S), 1.961eV(n-C4H9S), 1.969eV(n-C5H11S), 2.023eV(i-C3H7S), and 2.055eV(t-C4H9S), respectively. Compared with the experimental values, the average absolute error of the B3LYP method remained only 0.047eV.

     

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