Abstract: Molecular dynamic computer simulation has been carried out to study the process of film growth via Ag atoms absorbed on Cu (001) surface. The simulation showed that the distribution of Ag atoms in the film took on a distinct samdwich structure. In the process of relaxation after touching the substrate, the Ag atoms moved randomly but had a certain tendency under the simultaneous action of potential and thermal motion. It was observed and proved by radial distribution function that the crystalline character Ag atoms became weaker from bottom to top.