半导体点火桥的电路模拟

Circuit Simulation of Semiconductor Bridge

  • 摘要: 研究半导体桥的点火时间同输入能量以及电压的关系.通过对装有BNCP炸药的半导体点火桥的输入能量进行分析,结合其电阻特性,建立了半导体点火桥的Pspice器件模型.根据与实验结果的偏差,改进了半导体桥模型,使模型的适用范围从低能量(<5mJ)一直拓展到高能量(>40mJ).并对其在点火电路中不同发火条件下的点火时间与电压以及点火时间与能量的关系进行了模拟,得出了半导体桥存在最小点火时间的结论.

     

    Abstract: Relationship between the firing time and the input energy/voltage in a semiconductor bridge(SCB) was studied. A Pspice model was established by analyzing the resistor characteristics and the input energy of SCB in which BNCP dynamite was installed. Based on its errors discovered, the original model was amended so that it can be used from low energy (<5 mJ) to high energy (>40 mJ). Then the model was added into a firing circuit and simulated on different voltage and input energy conditions by the Pspice software. The conclusion drawn is that there is a minimum firing time for SCB.

     

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