Abstract: Since the mechanism of energy deposition and phase change in the process of semiconductor bridge electrical explosion is still unclear, the characteristics of electrical explosion and plasma morphology of double V-shaped semiconductor bridge were studied through experiments and numerical simulation. A synchronous test system was set up to monitor the current and voltage changes during the electrical explosion of the semicon-ductor bridge under charging voltages from 10 to 38 V. Combined with high-speed photography, the morphological evolution of the electrical explosion plasma was observed. It is found that the electrical explosion time and the loading voltage exhibited an exponential decay law, and the plasma formation time was highly consistent with the second peak of the voltage curve. A three-dimensional calculation model of electrical explosion of semiconductor bridge coupled with electrical-thermal-phase change was constructed. By introducing dynamic conductivity, solid-plasma phase change algorithm and potential-Joule thermal energy deposition model, the whole process of phase change, electrical explosion and subsequent plasma expansion in the bridge area was simulated, and the influence of voltage on temperature, density distribution and plasma flow field in the bridge area was analyzed. It is found that current concentration and Joule heat accumulation occurred at the V-shaped sharp corner of the bridge area under high voltage. It led to the edge-first electric explosion and the rapid expansion of the plasma. It was observed that the precursor compression wave was formed in the air around the plasma. At low voltage, the heat was concentrated in the center of the bridge area, which led to the first electric explosion in the central area, the plasma expanded slowly, and the compression effect on the air was obviously weakened. The research results can provide calculation methods and basic data for the optimal design and simulation of semiconductor bridge initiating explosive device transducer.